High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

Name: High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks
Brand: Sintec Optronics
SKU: STCX Series
Rating: 4.7 (171 reviews)

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High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

Large Image : High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

Product Details:

Place of Origin:	China
Brand Name:	Sintec Optronics
Model Number:	STCX Series

Payment & Shipping Terms:

Delivery Time:	5-7days
Payment Terms:	T/T via bank

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High Power Single Emitter Laser Diode Chips / Bars / Arrays / Stacks

Description

Highlight:

High Power Single Emitter Laser Diode

Single Emitter Laser Diode

Laser Diode

High-power Diode Single Emitter Laser Chips / Bars / Arrays / Stacks

(1) High-power Single Emitter Laser Chips – BC Series

Optical
Center Wavelength	nm	915	915	976	976
Wavelength Tolerance	nm	±10	±10	±3	±3
Output Power	W	25	30	25	30
Operating Mode	#	CW	CW	CW	CW
Fast-axis Divergence	Deg	55	55	55	55
Slow-axis Divergence	Deg	9.5	9.5	9.5	9.5
Spectral Width (FWHM)	nm	4	4	4	4
Wavelength Temp Coefficient	nm/℃	0.3	0.3	0.33	0.33
TE Polarization	%	97	97	97	97
Electrical
Emitter Width	μm	195	230	195	230
Cavity Length	mm	4.5	4.5	4.5	4.5
Width	μm	400	400	400	400
Thickness	μm	145	145	145	145
Geometric
Electro-optic Conversion Eff.	%	62	62	63	63
Slope Efficiency	W/A	1.15	1.15	1.1	1.1
Thershold Current	A	1.5	1.8	1.1	1.5
Operating Current	A	25	30	25	30
Operating Voltage	V	1.65	1.65	1.55	1.55

(2) High-power Diode Bar – BB Series

Optical
Center Wavelength	nm	808	808	808	808	940	940
Wavelength Tolerance	nm	±10	±10	±10	±3	±3	±3
Output Power	W	50	60	100	≥500	200	≥700
Fast-axis Divergence	Deg	≤65	≤65	≤65	≤65	≤55	≤55
Slow-axis Divergence	Deg	≤8.5	≤8.5	≤8.5	≤8.5	≤8.5	≤8.5
Spectral Width (FWHM)	nm	≤2.5	≤2.5	≤3	≤3.5	≤3	5
TE Polarization	TM/TE	TE	TE	TE	TE	TE	TE
Wavelength Temp Coefficient	nm/℃	0.28	0.28	0.28	0.28	0.3	0.3
Electrical
Electro-optic Conversion Eff	%	≥55	≥55	≥55	≥58	≥63	≥63
Slope Efficiency	W/A	1.25	1.25	1.25	1.25	1	1.15
Threshold Current	A	8	12	15	25	25	25
Operating Current	A	50	60	105	≤430	220	650
Operating Voltage	V	1.8	1.8	1.8	2.0	1.55	1.7
Pulse Width	us	-	-	-	200	-	500
Pulse frequency	Hz	-	-	-	400	-	160
Pulse duty cycle	%	-	-	-	8	-	8
Geometric
Number of Emitters	#	19	49	49	34	24	34
Emitter Width	μm	150	100	100	232	200	232
Emitter Pitch	μm	500	200	200	290	400	290
Fill Factor	%	30	50	50	80	50	80
Cavity Length	mm	1.0	1.0	1.5	1.5	3	2
Bar Thickness	μm	145	145	145	115	115	115
Bar Length	mm	10	10	10	10.25	10.25	10.25
Thermal
Operating Temperature	℃	25	25	25	25	20	25
Storage Temperature	℃	40~80	-40~80	40~80	40~80	-40~80	40~80
Flow Velocity	L/min	/	0.25	0.25	0.20	0.25	0.25

(3) High-power Diode VCSEL Chips – TOF series

Optical
Center Wavelength@Iop	nm	808	850	940	940
Spectral width (half width)	nm	2	2	2	2
Wavelength shift / temperature	nm/℃	0.07	0.07	0.07	0.07
Emitter aperture	μm	10	10	10	10
Emitter minimum pitch	μm	44	47	33	40
Emitter number	/	621	1216	305	364
Output Power	W	3.1	4	2.1	3.1
Operating current	A	3.5	5	2.8	3.5
Power consumption	W	7	10	5.6	7
Operating Voltage	V	2	2	2	2
Operating efficiency	%	35	40	40	40
Threshold current	A	0.7	1.2	0.38	0.47
Divergence angle	°	22	22	20	20
Geometric
Emitter length	μm	916	1535	525	916
Emitter width	μm	901	1560	615	610
Chip length	μm	1206	1845	695	996
Chip width	μm	1006	1670	795	890
Chip thickness	μm	100	100	100	100

(4) High-power Diode VCSEL Chips – SL Series

Optical
Center Wavelength@Iop	nm	934	940	946
Spectral width (half width)	nm		2
Wavelength shift / temperature	nm/℃		0.07
Emitter aperture	μm		8
Emitter minimum pitch	μm		21
Emitter number(Area A)	-		377
Emitter number(Area B)	-		6
Output Power(Area A)	W	1.3	1.5	1.7
Output Power(Area B)	W		0.024
Single point power	W		0.004
Operating current(Area A)	A		3.6
Operating current(Area B)	A		0.06
Power consumption(Area A)	W		3.6
Power consumption(Area B)	W		0.06
Operating Voltage	V		2
Operating efficiency	%		40	45
Threshold current(Area A)	A		0.38
Threshold current(Area B)	A		0.006
Divergence angle	°		20
Geometric
Luminous zone length	μm		523
Light-emitting area width	μm		548
Chip length	μm	758	778	798
Chip width	μm	701	721	741
Chip thickness	μm	90	100	110

(5) High-power Diode VCSEL Chips – LI Series

Optical
Center Wavelength	nm	905	940
Spectral width (half width)	nm	2	2
Wavelength shift / temperature	nm/℃	0.07	0.07
Emitter aperture	μm	12	12
Emitter minimum pitch	μm	22	22
Emitter number	/	136	136
Output Power	W	60	60
Operating current	A	15	15
Power consumption	W	300	300
Operating Voltage	V	25	25
Operating efficiency	%	20	20
Threshold current	A	0.2	0.2
Divergence angle	°	20	20
Geometric
Emitter length	μm	273	273
Emitter width	μm	288	288
Chip length	μm	520	520
Chip width	μm	401	401
Chip thickness	μm	100	100

(6) High-power Diode Laser Device – COS Series

Optical
Center Wavelength	nm	915	915	976	976
Wavelength Tolerance	nm	±10	±10	±3	±3
Output Power	W	25	30	25	30
Operating Mode	#	CW	CW	CW	CW
Fast-axis Divergence	Deg	55	55	55	55
Slow-axis Divergence	Deg	9.5	9.5	9.5	9.5
Spectral Width (FWHM)	nm	4	4	4	4
Wavelength Temperature Coefficient	nm/℃	0.3	0.3	0.33	0.33
TE Polarization	%	97	97	97	97
Electrical
Electrio-optic Conversion Eff	%	62	62	63	63
Slope Efficiency	W/A	1.15	1.15	1.1	1.1
Thershold Current	A	1.5	1.8	1.1	1.5
Operating Current	A	25	30	25	30
Operating Voltage	V	1.65	1.65	1.55	1.55
Geometric
Emitter Width	μm	195	230	195	230
Cavity Length	mm	4.5	4.5	4.5	4.5
Width	μm	400	400	400	400
Thickness	μm	145	145	145	145

(7) High-power Diode Laser Devices – MCC Series

Optical
Center Wavelength	nm	808	808	808	808	940	940
Wavelength Tolerance	nm	±10	±10	±10	±10	±3	±3
Output Power	W	50	60	100	≥500	200	200
Fast-axis Divergence	Deg	≤65	≤65	≤65	≤65	≤55	≤55
Slow-axis Divergence	Deg	≤8.5	≤8.5	≤8.5	≤8.5	≤8.5	≤8.5
Spectral Width (FWHM)	nm	≤2.5	≤2.5	≤3	≤3.5	≤3	≤3
Polarization Mode	TM/TE					TE	TE
Wavelength Temperature Coefficient	nm/℃	0.28	0.28	0.28	0.28	0.3	0.3
Electrical
Electrio-optic Conversion Eff	%	≥55	≥55	≥55	≥58	≥63	≥63
Slope Efficiency	W/A	1.25	1.25	1.25	1.25	1	1.15
Thershold Current	A	8	12	15	25	25	25
Operating Current	A	50	60	105	≤430	220	650
Operating Voltage	V	1.8	1.8	1.8	2.0	1.55	1.7
Pulse Width	us	-	-	-	200	-	500
Pulse frequency	Hz	-	-	-	400	-	160
Pulse Duty Cycle	%	-	-	-	8	-	8
Geometric
Number of Emitters	#	19	49	49	34	24	34
Emitter Width	μm	150	100	100	232	200	232
Emitter Pitch	μm	500	200	200	290	400	290
Fill Factor	%	30	50	50	80	50	80
Cavity Length	mm	1.0	1.0	1.5	1.5	3	2
Bar Thickness	μm	145	145	145	115	115	115
Bar Length	mm	10	10	10	10.25	10.25	10.25
Thermal
Operating Temp.	℃	25	25	25	25	20	25
Storage temp.	℃	-40~80	-40~80	-40~80	-40~80	-40~80	-40~80
Water Flow Rate	L/min	/	0.25	0.25	0.20	0.25	0.25

(8) High-power Diode Laser Stacks – MCP Series

Optical
Center Wavelength	nm	808	808	808
Wavelength Tolerance	nm	±10	±10	±3
Output Power	W	60	100	300
Number of Bars	#	2 ～ 60	2 ～ 60	2 ～ 60
Spectral Width (FWHM)	nm	≤8	≤8	4
Operating Mode	#	CW	CW	QCW
Fast-axis Divergence	Deg	≤42	≤42	40
Slow-axis Divergence	Deg	≤10	≤10	10
Wavelength Temp Coefficient	nm/℃	0.28	0.28	0.28
Electrical
Power Conversion Efficiency	%	50	50	50
Slope Efficiency/Bar	W/A	≥1.1	≥1.1	1.1
Threshold Current	A	4.5	4.5	4.5
Operating Current	A	0.16	0.16	290
Operating Voltage/Bar	V	≤2	≤2	1.8
Thermal
Operating Temperature	℃	15 ～ 35	15 ～ 35	25
Storage Temperature	℃	0~55	0~55	0~55
Bar/Water Velocity/Bar	l/m	0.3~0.5	0.3~0.5	0.3
Entrace Maximum Pressure	psi	55	55	55
Water Type	-	DI Water	DI Water	DI Water
Deionized Water Resistivity(DI)	kΩ·cm	200~500	200~500	200~500
Pure Water Filter Particles	μm	＜20	＜20	＜20

(9) High-power Diode Laser Stacks – QCP Series

Optical
Center Wavelength	nm	808	808
Wavelength Tolerance	W	±3	±10
Bar Output Power/Bar	%	300	40
Number of Bars	%	2 ～ 24	60
Total Output Power	μm	-	2400
Bar-to-Bar Spacing	-	0.4 ～ 1.8	0.9
Spectral Width (FWHM)	-	4	8
Pulse Width	m	50-500	10-100
Repetition Rate		1-200	1-10
Fast-axis Divergence(FWHM)	nm	40	40
Slow-axis Divergence(FWHM)	mW	10	10
Wavelength Temp Coefficient		0.28	0.28
Electrical
Electro-optic Conversion Eff	%	50	50
Slope Efficiency/Bar	W/A	1.1	1.1
Threshold Current	A	20	10
Operating Current	A	300	50
Operating Voltage/Bar	V	2	1.8
Thermal
Water Type	-	Pure Water	Pure Water
Operating Temperature	℃	25	25
Storage Temperature	℃	-40-85	-40-85

(10) High-power Diode Laser Devices – TO Series

Optical
		Min	Typical	Max
Center Wavelength	nm	820	830	840
Wavelength Tolerance	nm		±10
Output Power	W		1.0
Spectral Width(FWHM)	nm		3.0	4.0
Wavelength Temp Coefficient	nm/℃		0.3
Electrical
Electro-optic Conversion Eff	%	36	42
Slope Efficiency	W/A	1.05	1.1
Threshold Current	A		0.38	0.45
Operating Current	A		1.28	1.40
Operating Voltage	V		1.8	2.2
Thermal
Operating Temperature	℃	0	25	40
Storage Temperature	℃		-20~70